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TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -12 -12 8 -6 -24 2.5 0.7 6.3 -3 0.25 150 -55~150 Unit V V V A W W mJ A mJ C C Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA 2-3U1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 50.0 178.6 Unit C/W C/W 1 2 3 4 Marking (Note 5) Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. F3A 1 2002-08-28 TPCF8101 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 W ID = -3.0 A VOUT RL = 2 W VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 8 V, VDS = 0 V VDS = -12 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -200 mA VGS = -1.8 V, ID = -1.5 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.0 A VDS = -10 V, ID = -3.0 A Min 3/4 3/4 -12 -4 -0.5 3/4 3/4 3/4 7 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 60 32 22 14 1600 260 335 7 13 21 68 18.0 14.5 3.5 Max 10 -10 3/4 3/4 -1.2 85 40 28 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF S mW Unit mA mA V V Duty < 1%, tw = 10 ms = VDD ~ -6 V - VDD ~ -10 V, VGS = -5 V, ID = -6.0 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition 3/4 IDR = -6.0 A, VGS = 0 V Min 3/4 3/4 Typ. 3/4 3/4 Max -24 1.2 Unit A V Forward voltage (diode) Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 Unit: (mm) FR-4 25.4 25.4 0.8 Unit: (mm) (a) (b) Note 3: VDD = -10 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 W, IAR = -3.0 A Note 4: Repetitive rating: pulse width limited by Max. Channel temperature. Note 5: Black round marking "" locates on the left lower side of parts number "F3A" indicates terminal No.1. 2 2002-08-28 TPCF8101 ID - VDS -5 -5 -4.5 -4 -3 -2.5 -1.9 -1.8 -2 -3 -8 -1.7 -10 ID - VDS -2.5 -2 Common source Ta = 25C Pulse test -3 -4 -5 -6 -1.7 -4 -4 -1.9 -1.8 (A) -1.6 ID Drain current -2 -1.5 Drain current ID (A) -1.6 -1.5 VGS = -1.4 V -1 VGS = -1.4 V Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1.0 -2 0 0 0 0 -1 -2 -3 -4 -5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 Common source VDS = -10 V Pulse test -0.5 VDS - VGS Common source Ta = 25C Pulse test -8 (V) VDS Drain-source voltage Ta = 25C Ta = -55C -0.4 ID (A) -6 -0.3 Drain current -4 -0.2 ID = -6 A -0.1 -3 A -1.5 A -2 -4 -6 -8 -10 -2 Ta = 100C 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = -10 V Pulse test Ta = 25C 10 Ta = 100C 1000 Common source Ta = 25C Pulse test RDS (ON) - ID |Yfs| (S) Ta = -55C Drain-source on resistance RDS (ON) (m9) Forward transfer admittance 100 -1.8 V -2.5 V VGS = -4.5 V 10 1 0.1 -0.1 -1 -10 -100 1 -0.1 -1 -10 -100 Drain current ID (A) Drain current ID (A) 3 2002-08-28 TPCF8101 RDS (ON) - Ta 160 Common source -100 Common source Ta = 25C Pulse test IDR - VDS Drain-source on resistance RDS (ON) (m9) Drain reverse current IDR 120 (A) Pulse test 80 VGS = -1.8 V ID = -1.5 A 40 -2.5 V -4.5 V 0 -80 -40 0 40 ID = -2.5 A -6 A ID = -1.5 A -2.5 A -10 -2.5 V -4.5 V -1.8 V -1 V ID = -1.5, -2.5, -6 A -1 0 VGS = 0 V 160 0.4 0.8 1.2 1.6 2.0 80 120 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 VGS = 0 V f = 1 MHz Ta = 25C Ciss -2.0 Common source VDS = -10 V ID = -200 mA Pulse test Vth - Ta Gate threshold voltage Vth (V) -1.5 (pF) Capacitance C 1000 Coss Crss 100 -1.0 -0.5 0 -80 10 -0.1 -1 -10 -100 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 3 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) -20 Dynamic input/output characteristics Common source ID = -6 A Ta = 25C Pulse test -12 VGS VDS -4 -2.5 V VDD = -10 V -5 V -4 -12 -20 (W) (V) -16 -16 PD VDS 2 Drain power dissipation Drain-source voltage 1.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC -8 -8 0 0 40 80 120 160 0 0 8 16 24 32 0 40 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2002-08-28 Gate-source voltage VGS (V) 2.5 TPCF8101 rth - tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) (C/W) Transient thermal impedance rth 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 0.1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area -100 ID max (pulsed)* 1 ms* (A) ID -10 10 ms* Drain current -1 *: Single pulse Ta = 25C Curves must be derated linearly with increase in temperature -0.1 -0.1 VDSS max -1 -10 -100 Drain-source voltage VDS (V) 5 2002-08-28 TPCF8101 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-28 |
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